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Influences of post-annealing conditions on the formation of delafossite―CuFeO2 thin filmsCHEN, Hong-Ying; FU, Guan-Wei.Applied surface science. 2014, Vol 288, pp 258-264, issn 0169-4332, 7 p.Article

Structure and optoelectronic properties of multi-element oxide thin filmYU, Ruei-Sung; HUANG, Chueh-Jung; HUANG, Rong-Hsin et al.Applied surface science. 2011, Vol 257, Num 14, pp 6073-6078, issn 0169-4332, 6 p.Article

Attenuation of electromagnetic waves in onion-like carbon compositesMAKSIMENKO, S. A; RODIONOVA, V. N; LAMBIN, Ph et al.Diamond and related materials. 2007, Vol 16, Num 4-7, pp 1231-1235, issn 0925-9635, 5 p.Conference Paper

Effect of gas temperature on the structural and optoelectronic properties of a-Si:H thin films deposited by PECVDJIAN HE; CHONG WANG; WEI LI et al.Surface & coatings technology. 2013, Vol 214, pp 131-137, issn 0257-8972, 7 p.Article

Optical and Photoelectrical Properties of Nanostructured Semiconductor SystemsTIMOSHENKO, Victor Yu.Journal of nanoelectronics and optoelectronics. 2012, Vol 7, Num 6, issn 1555-130X, 59 p.Serial Issue

CVD diamond for spintronicsMARKHAM, M. L; DODSON, J. M; SCARSBROOK, G. A et al.Diamond and related materials. 2011, Vol 20, Num 2, pp 134-139, issn 0925-9635, 6 p.Article

Regioregularity effect on conformation and opto-electronic properties in single polythiophene chainsADACHI, Takuji; BRAZARD, Johanna; ONO, Robert J et al.Proceedings of SPIE, the International Society for Optical Engineering. 2011, Vol 8098, issn 0277-786X, isbn 978-0-8194-8708-7, 80980F.1-80980F.8Conference Paper

Diamond photodetector response to deep UV excimer laser excitationLANSLEY, S. P; MCKEAG, R. D; WHITFIELD, M. D et al.Diamond and related materials. 2003, Vol 12, Num 3-7, pp 677-681, issn 0925-9635, 5 p.Conference Paper

Bending Benzene: Syntheses of [n]CycloparaphenylenesHIRST, Elizabeth S; JASTI, Ramesh.Journal of organic chemistry. 2012, Vol 77, Num 23, pp 10473-10478, issn 0022-3263, 6 p.Article

Benzoselenadiazole Containing Donor―Acceptor―Donor Small Molecules: Nonbonding Interactions, Packing Patterns, and Optoelectronic PropertiesPALAS BARAN PATI; ZADE, Sanjio S.Crystal growth & design. 2014, Vol 14, Num 4, pp 1695-1700, issn 1528-7483, 6 p.Article

In-Situ Analysis of Optoelectronic Properties of Semiconductor Nanostructures and Defects in Transmission Electron MicroscopesOHNO, Yutaka; YONENEGA, Ichiro; TAKEDA, Seiji et al.Optoelectronic devices and properties. 2011, pp 241-262, isbn 978-953-307-204-3, 1Vol, 22 p.Book Chapter

High-performance metal-semiconductor-metal UV photodetector based on spray deposited ZnO thin filmsINAMDAR, S. I; RAJPURE, K. Y.Journal of alloys and compounds. 2014, Vol 595, pp 55-59, issn 0925-8388, 5 p.Article

Impact of strain on the band offsets of important III-V quantum wells: InxGa1-xN/GaN, GaAs/InxGa1-xP and InxGa1-xAs/AlGaAsBISWAS, Dipankar; PARTHA PRATIM BERA; DAS, Tapas et al.Materials science in semiconductor processing. 2014, Vol 19, pp 11-16, issn 1369-8001, 6 p.Article

Investigation of structural and optoelectronic properties of annealed nickel phthalocyanine thin filmsNEGHABI, Mina; ZADSAR, Mehdi; SEYED MOHAMMAD BAGHER GHORASHI et al.Materials science in semiconductor processing. 2014, Vol 17, pp 13-20, issn 1369-8001, 8 p.Article

Mutual alloying of XAs (X = Ga, In, Al) materials: Tuning the optoelectronic and thermodynamic properties for solar energy applicationsBAKHTIAR UL HAQ; AHMED, R; EL HAJ HASSAN, F et al.Solar energy. 2014, Vol 100, pp 1-8, issn 0038-092X, 8 p.Article

Optoelectronic properties of solution synthesis of carbon nanotube/ZnO:Al:N nanocomposite and its potential as a photocatalystBU, Ian Y. Y.Materials science in semiconductor processing. 2014, Vol 22, pp 76-82, issn 1369-8001, 7 p.Article

Strain-Induced Indirect to Direct Bandgap Transition in Multilayer WSe2DESAI, Sujay B; GYUNGSEON SEOL; JEONG SEUK KANG et al.Nano letters (Print). 2014, Vol 14, Num 8, pp 4592-4597, issn 1530-6984, 6 p.Article

Analytical characterization of engineered ZnO nanoparticles relevant for hazard assessmentBRAGARU, Adina; KUSKO, Mihaela; VASILE, Eugeniu et al.Journal of nanoparticle research. 2013, Vol 15, Num 1, issn 1388-0764, 1352.1-1352.17Article

Colloidal Arenethiolate-Capped PbS Quantum Dots: Optoelectronic Properties, Self-Assembly, and Application in Solution-Cast PhotovoltaicsGIANSANTE, Carlo; CARBONE, Luigi; GIGLI, Giuseppe et al.Journal of physical chemistry. C. 2013, Vol 117, Num 25, pp 13305-13317, issn 1932-7447, 13 p.Article

Effect of aluminum-nano structures on the optoelectronic and structural properties of the AZO layer with various substrate heating temperaturesLIN, Yen-Sheng; CAI, Ci-Sheng.Journal of materials science. Materials in electronics. 2013, Vol 24, Num 9, pp 3508-3513, issn 0957-4522, 6 p.Article

Hybrid structure comprised of SnO2, ZnO and Cu2S thin film semiconductors with controlled optoelectric and photocatalytic propertiesENESCA, Alexandru; ISAC, Luminita; DUTA, Anca et al.Thin solid films. 2013, Vol 542, pp 31-37, issn 0040-6090, 7 p.Article

Inverted hybrid solar cells based on pyrite FeS2 nanocrystals in P3HT: PCBM with enhanced photocurrent and air-stabilityRICHARDSON, Beau J; LEIZE ZHU; QIUMING YU et al.Solar energy materials and solar cells. 2013, Vol 116, pp 252-261, issn 0927-0248, 10 p.Article

Molecular Design of UV-vis Absorption and Emission Properties in Organic Fluorophores: Toward Larger Bathochromic Shifts, Enhanced Molar Extinction Coefficients, and Greater Stokes ShiftsXIAOGANG LIU; ZHAOCHAO XU; COLE, Jacqueline M et al.Journal of physical chemistry. C. 2013, Vol 117, Num 32, pp 16584-16595, issn 1932-7447, 12 p.Article

Molecular Origins of Optoelectronic Properties in Coumarins 343, 314T, 445, and 522BXIAOGANG LIU; COLE, Jacqueline M; WADDELL, Paul G et al.Journal of physical chemistry. C. 2013, Vol 117, Num 27, pp 14130-14141, issn 1932-7447, 12 p.Article

Porous silicon/NaOH texturization surface treatment of crystalline silicon for solar cellsBELHADJ MOHAMED, S; BEN RABHA, M; BESSAIS, B et al.Solar energy. 2013, Vol 94, pp 277-282, issn 0038-092X, 6 p.Article

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